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SEMICONDUCTOR DEVICES

 

Transistor Characteristics Apparatus  TE B18 Resistivity of Semiconductors by Four Probe Method at Differnt Temperatures and Determination of Band-Gap
Susceptibility or Fe cl3  Solution Hall Effect Experiment

 

'h' Parameters of PNP Transistor in Common Emitter Mode. TE B12
Calculation of 'H' Parameters, such as current gain, input impedance, output impedance. Instrument consist of Two DC Regulated Power Supplies 0-10VDC, 500mA/50mA 0-1V DC at 30mA, Four meter, One PNP Transistor mounted, connections of Supplies, Meters & Transistor are on terminals and oscillator.
Dimension 15"x18"4".
Transistor Characteristics Apparatus TE B18
Input & Output Characteristics of Common Base PNP & NPN Transistors Input & Output Characteristics of Common Emitter PNP & NPN Transistors.
Instrument consist of Two DC Regulated Power Supplies 0-10VDC/500 mA/ 50 mA & 0-1 VDC/30 mA, four round meters for voltage & current measurement, one PNP & one NPN Transistor mounted behind the panel, connections of Supplies & Transistors brought out on terminals.
Dimension 15"x8"x4".
SCR Characteristics Apparatus TE-B20
To plot Anode current Vs Anode Cathode Voltage Characteristics. Instrument consist of Two DC Regulated Power Supplies 0-3VDC/50mA & 0-150V DC, three meters for voltage & current measurement, SCR mounted on panel, connections of supplies. Meters & SCR brought on terminals.
Dimension 15"x8"x4".
FET Characteristics Apparatus TE-B15
To plot static & Transfer Characteristics. Instrument consist of Two DC Regulated Power Supplies 0-10V DC/ 10mA &0-5 VDC, three meters for voltage & current measurement, FET BFW10 mounted on the panel, connections of Supplies, Meters & FET brought on terminals.
Dimension 11"x8"x4"
Semiconductor Diode/PN Junction Diode Char. Apparatus TE-B4
To study Forward & Reverse Characteristics of PN Junction Diode.Instrument comprises of Two DC Power Supplies 0-50V 2mA, 0 to 1V 200 mA two meters for voltage & current measurement, PN Junction Diodes mounted connections of Supplies, Meters & Diodes brought on terminals.
Dimension 10"x8"x4".
Voltage Stabilization Characteristics of Zener Diode TE-B4A
To study Input Voltage, Output Voltage Char. & Output Voltage, Load Characteristics. Instrument consists of DC Power Supply, two round meters to measure input voltage & output voltage, one Zener Diode mounted on panel & connections brought out at terminals.
Dimension 10"x8"x4".
Zener Diode Characteristics Apparatus (Forward & Reverse V-I Characteristics).TE-B3
To study Forward & Reverse V-I Characteristics of Zener Diode. Instrument comprises of DC Regulated Power Supply 0-25 VDC 15mA, two meters for voltage & current measurement, Zener Diodes mounted on panel, connections on terminals.
Dimension 10"x8"x4".
PN Junction/Zener Diode Characteristics Apparatus (Forward & Reverse V-I Characteristics) TE-B3A
To study Forward & Reverse Characteristic of PN Junction Diode & Zener Diode. Instrument comprises of two DC Power Supplies, two meters double range to measure voltages & current, PN Junction Diode & Zener Diode mounted & connections brought on terminals. Dimension 15"x8"x4".
Energy Band Gap of PN Junction Diode TE-B1
To plot reverse saturation current Vs Temperature in reverse biased PN junction Diode. Instrument consists of DC Regulated Power Supply 0-IV DC/500 mA, two round meters for voltage & current measurement, one PN Junction Diode is in Oven, 100ºC thermometer provided with temperature control system. Dimension 10"x8"x5".
Thermistor Characteristics Apparatus TE-B6
To plot -ve Resistance co-efficient Characteristics of a Thermistor. Instrument comprises of DC Regulated Power Supply 0-IV-DC/1 mA, two meters for voltage & current measurement, one Thermistor and a Oven. Connections of Supplies, Meters & Thermistor brought on terminals provided with thermometer. Dimension 10"x8"x5".
UJT Characteristics Apparatus TE-B19
To plot V-I Characteristics & to measure interbase resistance. Instrument comprises of Two DC Regulated Power Supplies 0-10V, DC/30 mA & 0-IV, three round meters for voltage & current measurement, one UJT 2N2646 mounted on panel, connections of Supplies, Meters & UJT brought on terminals. Dimension 15"x8"x4".
Resistivity of Semiconductors by Four Probe Method at Differnt Temperatures and Determination of Band-Gap
The experiment consists of the following :
(i) Four Probe Arrangement
(ii) Oven (upto 200ºC)
(iii) Sample : Ge Crystal mounted
(iv) Thermometer (0-200ºC)
(v)Four Probe Setup
(a) Constant Current power supply digital Accuracy : +0.25% of the reading +1 digit Load Regulation : 0.03% for no load to full load
(b)Electronic Millivoltmeter 200 mV Accuracy : + 0.1% of reading = 1 digit Impedence : 1 Mohm
Display : 3½ digit, 7 segment LED (12.5mm) height with auto polarity and decimal indication.
Susceptibility or Fe cl3 Solution :
To study susceptibility of Ferous Solution in strong magnetic field, complete apparatus consisting  of electromagnet of 7.5 K.G. strength with its Power Supply 0-100V variable 4 Amps. Digital Gauss Meter 0-20 Kg with Hall Probe., Graduated Capillary tube with stand.
Hall Effect Experiment
The set up consists of Electromagnet of 7-5 K.G., Power Supply for Electromagnet 0-100V, 4 Amps with meter, Germanium Crystal mounted and its constant current power supply 0-20mA fitted with two Digital Meters for Halls Voltage and Crystal Current. Gauss Meter Digital 0-20K.Gauss with Hall Probe.
Ultrasonic Diffraction Grating Experiment
To determine velocity of ultra sonic wave)
Complete apparatus with R.F. Oscillator 3-8 Mhz, Crystal with tank, Specto meter of 9" bed, Sodium Lamp with Wooden Box and Transformer.
Dielectric Constant Apparatus
To calculate dielectric constant of liquids and solids. The instrument consists of high frequency oscillator of tuneable with outer gang condenser optimum tunning is indicated on meter. The change after placing dielectric between parallel plates is again detected and difference noted for calculation.
Mosfet Characteristics Apparatus TE-B15A
To plot VDS VSID for different values of VGS. Instrument comprises of Two DC Power Supplies 0-10V, DC 10mA & 0-5V DC, three meters for voltage & current measurement, one Mosfet no. TRF 840 mounted on panel, connections of Supplies, Meters & Mosfet brought out terminals. Dimensions 11"x8"x4".
Characteristics & Applications Thyristors TE-B20T
To study Characteristics & Applications of Diac, Triac, UJT & SCR. Instrument comprises of Three DC Regulated Power Supplies 0-15 VDC/150mA, 0-50 VDC/100 mA & 0-2.5V DC/200 mA, four dual range meters for voltage & current measurement, UJT, SCR, Diac, Triac & their supportive components mounted on panel, connections of Supplies, Meters & componentsbrought on terminal. Dia mention 15"x8"x4".
Diac Characteristics Apparatus TE-B20D
To study VI Characteristics of Diac. Instruement comprises of DC Regulated Power Supply 0-50 VDC/100mA, two round meters for voltage & current measurement, one Diac mounted on panel, connections of Supplies & diac brought at terminals. Dimension 15"x8"x4".
Triac Characteristics Apparatus TE-B20A
To study the MT Characteristics with Gate Signal. Instrument comprises of Two DC Regulated Power Supplies 0-25VDC/100mA & 0-5 VDC/200 mA, three round meters for voltage & current measurement, Triac mounted on panel, connections of Supplies & Triac brought on terminals. Dimension 15"x8"x4".
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Application For Photo Cells and Solar Cells
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Laser Experiment
Verification of Various Laws & Conservation of Signal
Verification of Network Theorem
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Digital Seed Counter
Moisture Meter For Wood
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